2SB1628 features high current capacitance. low collector saturation voltage. absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo -20 v collector to emitter voltage v ceo -16 v emitter to base voltage v ebo -6 v collector current (dc) i c(dc) -3 a collector current (pulse) * ic (pulse) -5 a base current (dc) i b(dc) -0.2 a base current (pulse) * i b(pulse) -0.4 a total power dissipation p t 2w junction temperature t j 150 storage temperature t stg -55to+150 *pw 10 ms, duty cycle 50% product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cbo =-20v,i e = 0 -100 na emitter cut-off current i ebo v ebo =-6.0v,i c = 0 -100 na h fe1 v ce =-2.0v,i c = -0.5 a 140 280 560 h fe2 v ce =-2.0v,i c = -3.0 a 70 base to emitter voltage * v be v ce =-2.0v,i c = -0.05 a -600 -660 -700 mv collector saturation voltage * v ce(sat)1 i c =-2.0a,i b = -0.1 a -240 -350 mv collector saturation voltage * v ce(sat)2 i c =-3.0a,i b = -0.15 a -350 -550 mv base saturation voltage * v be(sat) i c =-2.0a,i b = -0.1 a -0.95 -1.2 v gain bandwidth product f t v ce =?3.0v,i e = 0.5 a 320 mhz output capacitance c ob v cb =?10v,i e = 0, f = 1 mhz 45 pf turn-on time t on 70 ns storage time t stg 110 ns fall time t f 40 ns * pulsed: pw 350 s, duty cycle 2%. i c =-1.0a,v cc =-10v, r l =5.0 ? ,i b1 =-i b2 =-0.1a, dc current gain * h fe classification marking zx zy zz h fe 140 280 200 400 280 560 2SB1628 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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